1N6o97, 1N6o98 International
Bulletin PD-2.329 rev.B 1’l/02 I‘-“R Redlflel
Voltage Ratings
1N6o98
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
lF(AV) Max. Average Forward CurrentSee Fig. 5
IFSMMax. Peaxone Cycle Non-Repetitive
50% dutycycle @ TC = 70 “C, rectangularwavetorm
Sus Sine orsps Rect. pulse F0"0Win9 any ratedload cond n and60Hz haltilvave, single phase Wim med VRRMapp|‘ed
TJ=25°C, iAS=12Amps,L=1.12mH
Currentdecaying linearlytozero in 1 psec
Surgecurrent See Fig. 7
EAS Non—RepetitiveAvalanche Energy
IAR RepetitiveAvalancheCurrent
Electrical Specifications
Parameters
VFM Max. Fonlilard Voltage Drop (1)
See Fig. 1
IRM Max. Reverse Leakage Current (1)
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change(Rated VR)
( )1 Pulse Width < aoops, Duty Cycle < 2%
Frequencylimited by TJ max. VA = 1 .5xVR typical
VR = rated VR
VR = 1vDC, (test signal range 100Khz to mm) 25 “C
Measured from top of terminal to mounting plane
DC operation See Fig. 4
Mounting surface. smooth and greased
lubricated threads
(DO-5)(A:)>m
Thermal-Mechanical Specifications
Parameters
TJ Max.JunctionTemperatureRange
Tslg Max.St0rageTemperatureRange
Max. Thermal Resistance Junction
to Case
Typical Thermal Resistance, Caseto
HeatsinkU1
wt Approximate Weight
T
MountingTorque Min.
vi
5
N"1
RthJC
Rthcs
8N"1U
9NO
Max.
Casestyle
“ JEDEC Registered Values
2 www.irf.com
*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
1N6263W-7-F DIODE SCHOTTKY 60V 333MW SOD123
1N6392 DIODE SCHOTTKY 45V 60A DO-5
1N916B DIODE HI CONDUCTANCE 100V DO-35
1PS10SB82,315 DIODE SCHOTTKY 15V 30MA SOD882
1PS193,115 DIODE 80V 215MA HI-SPEED SC59
1PS59SB10,115 DIODE SCHOTTKY 30V 300MA SC59
1PS59SB20,115 DIODE SCHOTTKY 40V 500MA SC59
1PS70SB20,115 DIODE SCHOTTKY 40V 500MA SC70
相关代理商/技术参数
1N6097_07 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:50 Amp Schottk Rectifier
1N6097R 功能描述:肖特基二极管与整流器 30V - 50A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N6098 功能描述:肖特基二极管与整流器 40V - 50A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N6098R 功能描述:肖特基二极管与整流器 40V - 50A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N6099 制造商:未知厂家 制造商全称:未知厂家 功能描述:HIGH CONDUCTANCE LOW LEAKAGE DIODES
1N60A 制造商:Microsemi Corporation 功能描述:45V 0.05A 2PIN DO-7 - Tape and Reel 制造商:NTE Electronics 功能描述:D-GE 40PRV .005A 制造商:Solid State Devices Inc (SSDI) 功能描述:DO 7 Glass Germainuim Diodes
1N60A_09 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5 Amps, 600/650 Volts N-CHANNEL MOSFET
1N60A_11 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.5A, 600V N-CHANNEL POWER MOSFET